During a semiconductor-etching process

CHEMISTRY · Multi-part · A Level · Chemistry · Bonding · Bonding

Problem

During a semiconductor-etching process, engineers must remove residual halogen gases by dissolving them in a chilled bath of liquid N,N-dimethylformamide (DMF), which has a dipole moment of 3.86 D. Two candidate waste gases are molecular fluorine (F₂) and molecular chlorine (Cl₂). Relevant molecular data at 5 °C: • F₂: polarizability α = 1.43 ų, molar mass = 38 g mol⁻¹ • Cl₂: α = 5.40 ų, molar mass = 71 g mol⁻¹ Assume the bath is vigorously stirred so that gas-phase mass-transfer limitations are negligible. (a) Predict which gas will exhibit the stronger overall attractive interaction with liquid DMF. Provide a clear justification based on the data given. (b) Using an appropriate proportional argument, estimate the ratio of the expected dipole-induced dipole interaction energies (DMF–Cl₂ to DMF–F₂). Show all reasoning steps. (c) Despite the interaction-energy difference you estimated in part (b), the dissolution rate of F₂ into DMF is observed to be comparable to that of Cl₂. Propose one kinetic or thermodynamic factor—unrelated to dipole-induced dipole interactions—that could account for the similar rates, and explain your proposal.

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