A pure semiconductor's carrier density

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Condensed Matter Physics, Ch Tight binding, band filling and the three kinds of solid

Problem

A pure semiconductor's carrier density, with the slowly varying T3/2T^{3/2} prefactor already divided out as the text does for germanium, gives the following values of y=ln⁡(n/T3/2)y=\ln(n/T^{3/2}) against 1/T1/T, in arbitrary consistent units. Data: at T=250 KT=250\,\mathrm{K}, 1/T=0.004000 K−11/T=0.004000\,\mathrm{K^{-1}} and y=−9.57y=-9.57; at T=300 KT=300\,\mathrm{K}, 1/T=0.003333 K−11/T=0.003333\,\mathrm{K^{-1}} and y=−5.32y=-5.32; at T=350 KT=350\,\mathrm{K}, 1/T=0.002857 K−11/T=0.002857\,\mathrm{K^{-1}} and y=−2.28y=-2.28; at T=400 KT=400\,\mathrm{K}, 1/T=0.002500 K−11/T=0.002500\,\mathrm{K^{-1}} and y=0.00y=0.00. Using the two end points, find the slope of yy against 1/T1/T, and hence estimate the gap EgE_g extrapolated to 0 K0\,\mathrm{K}.

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