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A silicon crystal is doped with phosphorus and no acceptors
PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices
Condensed Matter Physics, Ch Homogeneous semiconductors: counting carriers, doping and mobility
Problem A silicon crystal is doped with N d = 1.0 × 10 17 c m − 3 N_d=1.0\times10^{17}\,\mathrm{cm^{-3}} N d = 1.0 × 1 0 17 c m − 3 phosphorus and no acceptors. Using N c = 2.8 × 10 19 c m − 3 N_c=2.8\times10^{19}\,\mathrm{cm^{-3}} N c = 2.8 × 1 0 19 c m − 3 and the measured n i = 1.0 × 10 10 c m − 3 n_i=1.0\times10^{10}\,\mathrm{cm^{-3}} n i = 1.0 × 1 0 10 c m − 3 , find the hole density p p p and how far μ \mu μ sits below E c E_c E c .
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