The chapter's resistivity-against-doping data for n-type silicon give at and at

PHYSICS · Subjective · Fermi University Physics · Scientific Practice & Experimental Methods · Condensed Matter, Materials & Soft Matter · Data analysis and model fitting in the laboratory

Condensed Matter Physics, Ch Homogeneous semiconductors: counting carriers, doping and mobility

Problem

The chapter's resistivity-against-doping data for n-type silicon give ρe=0.52 Ω cm\rho_e=0.52\,\Omega\,\mathrm{cm} at Nd=1.0×1016 cm−3N_d=1.0\times10^{16}\,\mathrm{cm^{-3}} and ρe=0.087 Ω cm\rho_e=0.087\,\Omega\,\mathrm{cm} at Nd=1.0×1017 cm−3N_d=1.0\times10^{17}\,\mathrm{cm^{-3}}. Treating log⁡ρe\log\rho_e as linear in log⁡Nd\log N_d between these two points, estimate the doping that would give ρe=0.20 Ω cm\rho_e=0.20\,\Omega\,\mathrm{cm}.

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