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A silicon crystal is doped with boron and no donors
PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices
Condensed Matter Physics, Ch Homogeneous semiconductors: counting carriers, doping and mobility
Problem A silicon crystal is doped with N a = 4.0 × 10 15 c m − 3 N_a=4.0\times10^{15}\,\mathrm{cm^{-3}} N a = 4.0 × 1 0 15 c m − 3 boron and no donors. Using N v = 1.04 × 10 19 c m − 3 N_v=1.04\times10^{19}\,\mathrm{cm^{-3}} N v = 1.04 × 1 0 19 c m − 3 and the measured n i = 1.0 × 10 10 c m − 3 n_i=1.0\times10^{10}\,\mathrm{cm^{-3}} n i = 1.0 × 1 0 10 c m − 3 , find the hole density p p p , the electron density n n n , and how far μ \mu μ sits above E v E_v E v .
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