A germanium device is doped at

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Condensed Matter Physics, Ch Homogeneous semiconductors: counting carriers, doping and mobility

Problem

A germanium device is doped at Nd=1.0×1014 cm−3N_d=1.0\times10^{14}\,\mathrm{cm^{-3}}, lighter than the chapter's own example. Using germanium's ni(300)=2.0×1013 cm−3n_i(300)=2.0\times10^{13}\,\mathrm{cm^{-3}} (the chapter's own rounded value) and Eg=0.67 eVE_g=0.67\,\mathrm{eV} held fixed, estimate the highest temperature at which the device still sits safely on the extrinsic plateau, taken as the temperature where ni(T)n_i(T) reaches NdN_d.

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