For a silicon junction doped at

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Condensed Matter Physics, Ch The junction: diodes, transistors, lamps and solar cells

Problem

For a silicon junction doped at Na=Nd=4.0×1016 cm−3N_a=N_d=4.0\times10^{16}\,\mathrm{cm^{-3}}, working through the built-in-voltage formula gives Vbi=0.786 VV_{\rm bi}=0.786\ \mathrm{V}. Using ϵrϵ0=1.04×10−10 F m−1\epsilon_r\epsilon_0=1.04\times10^{-10}\,\mathrm{F\,m^{-1}} for silicon, find the depletion width WdW_d and the peak field Ex,maxE_{x,{\rm max}}.

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