Gallium arsenide's intrinsic carrier density at is about

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Condensed Matter Physics, Ch The junction: diodes, transistors, lamps and solar cells

Problem

Gallium arsenide's intrinsic carrier density at 300 K300\,\mathrm{K} is about ni≈2×106 cm−3n_i\approx2\times10^{6}\,\mathrm{cm^{-3}}, far smaller than silicon's 1.0×1010 cm−31.0\times10^{10}\,\mathrm{cm^{-3}} because of its larger gap. Estimate how a gallium arsenide junction's saturation current compares with a silicon junction's at the same doping, and say in one sentence why this matters for using gallium arsenide devices at high temperature.

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