A silicon junction is doped at and

PHYSICS · Multi-part · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Condensed Matter Physics, Ch The junction: diodes, transistors, lamps and solar cells

Problem

A silicon junction is doped at Na=4.0×1017 cm−3N_a=4.0\times10^{17}\,\mathrm{cm^{-3}} and Nd=1.0×1017 cm−3N_d=1.0\times10^{17}\,\mathrm{cm^{-3}}, with ni=1.0×1010 cm−3n_i=1.0\times10^{10}\,\mathrm{cm^{-3}}. ((a)) In one or two sentences, say why the charge density ρq\rho_q across this junction is drawn as two rectangular slabs, the field ExE_x as two straight ramps meeting at a single peak, and the potential as two parabolic arcs, rather than any other shape. ((b)) Find the built-in voltage VbiV_{\rm bi}, the total width WdW_d, and how that width splits between xnx_n and xpx_p.

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