A chip design calls for a phosphorus-doped layer reaching about into a silicon wafer…
PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Crystal structure, bonding and diffraction · Crystal structure, bonding and diffraction
Condensed Matter Physics, Ch Real crystals: vacancies, dislocations and the strength of metals
Problem
A chip design calls for a phosphorus-doped layer reaching about 150nm into a silicon wafer after a single drive-in anneal at 1050∘C. Phosphorus in silicon has D0=3.85cm2s−1 and Q=3.66eV (Section 13.3). Using the order-of-magnitude convention Dt for the diffusion distance, estimate how long the anneal must run.