A silicon diode inside a warm enclosure sits at

PHYSICS · Subjective · Fermi University Physics · Electronics, Instrumentation & Communication · Semiconductor devices and analogue circuits · Semiconductor devices and analogue circuits

Electronics for Measurement, Ch The junction: an element whose current is exponential in its voltage

Problem

A silicon diode inside a warm enclosure sits at T=350 KT = 350\,\mathrm{K}. For this problem take its ideality factor as n=1n = 1 and its saturation current as IS=1.0×10−13 AI_S = 1.0\times10^{-13}\,\mathrm{A}, both unchanged from their room-temperature values. (A real ISI_S grows by about 1616 percent per kelvin; holding it fixed isolates the effect of VTV_T alone.) Using the diode equation and VT=kBT/eV_T = k_BT/e, find its current when the forward voltage across it is 0.60 V0.60\,\mathrm{V}.

Browse the problem library