A silicon module is rated at standard test conditions ( , ): , ,

PHYSICS · Multi-part · Fermi University Physics · Earth, Climate & Energy Physics · Energy resources and conversion · Energy resources and conversion

Energy from Physics, Ch The illuminated junction: generation, collection and the cell's characteristic

Problem

A silicon module is rated at standard test conditions (25∘C25^\circ\mathrm{C}, 1000 W m−21000\,\mathrm{W\,m^{-2}}): Jsc=40 mA cm−2J_{sc}=40\,\mathrm{mA\,cm^{-2}}, Voc=0.691 VV_{oc}=0.691\,\mathrm{V}, FF=0.844\mathrm{FF}=0.844. Its nominal operating cell temperature is TNOCT=45∘CT_{\rm NOCT}=45^\circ\mathrm{C} (defined at 800 W m−2800\,\mathrm{W\,m^{-2}} and 20∘C20^\circ\mathrm{C} air). On a cold, bright morning the irradiance on the module plane is Fc=400 W m−2F_c = 400\,\mathrm{W\,m^{-2}} and the air temperature is −5∘C-5^\circ\mathrm{C}. Idealise the short-circuit current as proportional to irradiance, take dVoc/dT=−1.7 mV K−1\mathrm{d}V_{oc}/\mathrm{d}T = -1.7\,\mathrm{mV\,K^{-1}} for the temperature effect at fixed light level, and take the 59.5 mV59.5\,\mathrm{mV}-per-decade rule for the effect of light level at fixed temperature, adding the two shifts to VocV_{oc}. ((a)) Find the cell temperature using Tcell=Tair+(TNOCT−20∘C)Fc/(800 W m−2)T_{\rm cell}=T_{\rm air}+(T_{\rm NOCT}-20^\circ\mathrm{C})F_c/(800\,\mathrm{W\,m^{-2}}). ((b)) Predict JscJ_{sc}, VocV_{oc}, FF\mathrm{FF} and the output power per unit area on this cold bright morning, and compare the resulting efficiency (against the incident 400 W m−2400\,\mathrm{W\,m^{-2}}) with the rated 23.3%23.3\%.

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