Boron is diffused into silicon at for from a source held at the surface

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Crystal structure, bonding and diffraction · Crystal structure, bonding and diffraction

Solid State Physics, Ch Point defects, dislocations and alloys

Problem

Boron is diffused into silicon at

1000\,\mathrm{^{\circ}C}

for

1\,\mathrm{hour}

from a source held at the surface. Its diffusion coefficient follows

D = D_0e^{-Q/k_BT}

with

D_0 = 7.6\times10^{-5}\,\mathrm{m^2\,s^{-1}}

and

Q = 3.46\,\mathrm{eV}

. Using the matching solution of the diffusion equation, calculate the diffusion length

\sqrt{Dt}

for this anneal.

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