Using the silicon two-centre Slater-Koster parameters and

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Free electrons, energy bands and electronic structure · Free electrons, energy bands and electronic structure

Solid State Physics, Ch Tight binding and the band structures of real materials

Problem

Using the silicon two-centre Slater-Koster parameters

V_{pp\sigma}=2.72\,\mathrm{eV}

and

V_{pp\pi}=-0.72\,\mathrm{eV}

, compute the hopping integral

E_{x,y}

between a

p_x

orbital on one silicon atom and a

p_y

orbital on its neighbour, for a bond lying along the

[110]

direction.

Browse the problem library