A p-type silicon sample contains mid-gap traps that act as recombination centres for…

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Solid State Physics, Ch Semiconductors: masses, statistics, defect levels and mobility

Problem

A p-type silicon sample contains Nt=5×1013 cm−3N_t=5\times10^{13}\,\mathrm{cm^{-3}} mid-gap traps that act as recombination centres for the minority electrons. The electron capture cross section is σn=5×10−16 cm2\sigma_n=5\times10^{-16}\,\mathrm{cm^2} and the thermal velocity is vth=1×107 cm s−1v_{\rm th}=1\times10^{7}\,\mathrm{cm\,s^{-1}}. Using low-injection Shockley-Read-Hall statistics, calculate the minority-electron lifetime τn=1/(σnvthNt)\tau_n=1/(\sigma_nv_{\rm th}N_t).

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