A lightly doped GaAs sample is measured at low temperature

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Solid State Physics, Ch Semiconductors: masses, statistics, defect levels and mobility

Problem

A lightly doped GaAs sample is measured at low temperature, where ionised-impurity scattering dominates and the Hall scattering factor is rH=⟨τ2⟩/⟨τ⟩2=1.93r_H=\langle\tau^2\rangle/\langle\tau\rangle^2=1.93. The measured Hall mobility is μn,H=6000 cm2 V−1s−1\mu_{n,H}=6000\,\mathrm{cm^2\,V^{-1}s^{-1}}. Calculate the drift mobility μn,d\mu_{n,d}.

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