A silicon diode has Shockley saturation current density at

PHYSICS · Subjective · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Semiconductor physics and devices · Semiconductor physics and devices

Solid State Physics, Ch Junctions and devices, finished

Problem

A silicon diode has Shockley saturation current density J0=1.2×10−12 A cm−2J_0=1.2\times10^{-12}\,\mathrm{A\,cm^{-2}} at T=300 KT=300\,\mathrm{K}. Near room temperature, J0∝ni2J_0\propto n_i^2 rises by a factor of about 4.74.7 for every 10 K10\,\mathrm{K} rise in temperature. Estimate J0J_0 at T=320 KT=320\,\mathrm{K}.

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