The subthreshold transfer curve of a MOSFET at gives two points on the straight…

PHYSICS · Multi-part · Fermi University Physics · Condensed Matter, Materials & Soft Matter · Electronics, Instrumentation & Communication · Semiconductor devices and analogue circuits

Solid State Physics, Ch Junctions and devices, finished

Problem

The subthreshold transfer curve of a MOSFET at

T=300\,\mathrm{K}

gives two points on the straight (subthreshold) part of

\log_{10}I_D

against gate voltage

V_G

V_G=0.100\,\mathrm{V}

I_D=1.00\times10^{-9}\,\mathrm{A}

V_G=0.304\,\mathrm{V}

I_D=1.00\times10^{-6}\,\mathrm{A}

. The gate oxide has

C_{ox}=1.73\,\mu\mathrm{F\,cm^{-2}}

, the value used for the

2\,\mathrm{nm}

SiO

_2

MOS capacitor worked earlier. ((a)) Read the subthreshold swing

S_{\rm sub}

(in

\mathrm{mV}

per decade) off the two points. ((b)) Find the body factor

m_b

and the depletion capacitance per unit area

C_{\rm dep}

implied by

m_b = 1+C_{\rm dep}/C_{ox}

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